1550nm MQW Epiwafer Specification
Layer name |
Composition |
Doping concentration |
Thickness |
n upper layer |
n-InP |
1 x 1018cm-3 |
10 nm |
n-InP (Repeat 2) |
1 x 1018cm-3 |
7.5 nm |
|
Super lattice |
n-In0.85Ga0.15As0.327P0.673 (Repeat 2) |
1 x 1018cm-3 |
7.5nm |
N cladding layer |
n-InP |
1 x 1018cm-3 |
110 nm |
Al0.055Ga0.292In0.653As, 1.5 mm (Repeat 8 wells) |
Undoped |
7nm |
|
Quantum Wells |
Al0.089Ga0.461In0.45As, 1.3 mm (Repeat 9 barriers) |
Undoped |
10 nm |
SCH |
p-Al0.131Ga0.34In0.529As |
1 x 1017cm-3 |
0.25 mm |
P cladding |
p-InP |
1 x 1018cm-3 |
1.5 mm |
P contact layer |
p-In0.53Ga0.47As |
1 x 1019cm-3 (Zn-doped) |
0.1 mm |
p buffer layer |
p-InP |
1 x 1018cm-3 |
0.3 um |
P substrate |
p-InP |
1 x 1018cm-3 |
300 mm |