DFB Epiwafer– 25G/10G/2.5G– 1.3um, 1.5um– Grating Completed * Holography *E-beam *Nano Imprint– P-metal Completed APD Epiwafer– 25G/10G/2.5G– Zn-diffusion completed FP Epiwafer-10G/ 2.5G– 1.3um, 1.5um PIN PD Epiwafer– 50G/ 25G/10G– Zn-diffusion competed EML Epiwafer– 50G/10G-1.3um, 1.55um, 1.577um– Grating Completed * E-beam
DFB Epiwafer– 25G/10G– CWDM4, PAM4– Grating Completed * Holography *E-beam *Nano Imprint– P-metal Completed High Power CW Laser Epiwafer– Grating Completed *E-beam *Nano Imprint– P-metal Completed VCSEL Epiwafer– 50G/25G– 850nm Silicon Photonics Epiwafer– AIQ-MQW DFB LD base wafer– BH Type DFB LD epiwafer GaAS PD Epiwafer– 50G/25G/10G
High-speed data transmission with a commercial high power GaN Laser diode is easy to achieve thru a fixed (pre-aligned) point-to-point free-space system. It may be a secure and easiest way to increase bandwidth (10 to 100 times more than a radio frequency system), which enables the transfer of more data in less time. It’s ideal […]