40G 1310nm PIN PD Chip

Feature:

InGaAs APD Chip for 2.5Gbps
50um large APD detecting area
TO-46 with shart Cap Lens
2.5mm focal distance
Cost-effective GPON ONu

Application:

The InGaAs APD with TIA is designed for high speed, high performance data communication and telecommunication applications. Excellent power coupling to single mode fiber enhance better sensitivity.

Parameter	Symbol	Conditions	Min.	Max.	Unit
Operating Temperature	T_op	—	-40	85	°C
Storage Temperature	T_storage	—	-40	+85	°C
Solder Reflow Temperature	STEM	10sec Max	—	260	°C
Optical Input Power	Pin	—	—	-7.0	dBm
Power Supply Voltage	Vcc	—	—	3.6	V

Electrical and optical characteristics

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Supply Voltage	Vcc	—	3.0	3.3	3.6	V
Supply Current	Icc	Vcc=3.3V, no loads	15	20	24	mA
Breakdown Voltage	V_BR	I_d=10uA	35	45	55	V
Operating Voltage	Vop	Vcc=3.3V	VBR-3			V
Sensitivity	S	λ=1490nm@2488.32Mbps, PRBS=233-1, ER=10dB, DER=10-¹⁰	—	—	-31	dBm
Wavelength	λ	—	1260	1310	1620	nm
Rise/Fall Time (20%~80%)	t_r/t_f	Pin=-30dBm, M=9	—	150/150	—	ps
VBR Temperature Coefficient	∆V_BR/T	I_d=10ɥA, TC=25~70°C I_d=10ɥA, TC=-40~70°C	— 0.1	0.12 —	— 0.15	%/°C %/°C
Saturation Power	P_sat	λ=1490nm@2488.32Mbps , PRBS=233-1, ER=10dB, DER=10-¹⁰	-7.0	—	—	dBm