808nm Laser Epiwafer

The 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1mW.  Good uniformity of wavelength around 2’’ wafer can be achieved.

Device Performance:

Characteristics	Symbol	Conditions	Typical Value
Threshold Current	Ith	without coating	<150 mA
Operating Current	IOP	@250mW	546 mA
Wavelength	λ	@250mW	~808nm
Slope efficiency	η	without coating	~0.55 W/A
※ Device structure: 50μm x 700μm BA Laser; as cleaved facet @ R.T.