650nm Resonant cavity light emitting diode (RCLED)
Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication. The active region comprises multiple quantum wells of InGaP/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors. Since N-DBR has higher refection, the light is emitted from the P-DBR mirror. 650nm RCLED can be used as light source in plastic optical fiber (POF) communication application.
Epitaxial Capability
| Parameters | Values |
| PL wavelength | ±5nm of specified value |
| Etlon dip | ±10nm of specified value |
| SB center | ±10nm of specified value |
| Thickness uniformity | Better than ±2.5% |
| Doping control | ~±30% |
| P-AlGaAs doping (cm-3) | C doped; 5E17 to 1E201 |
| N-AlGaAs doping (cm-3) | Si doped; 1E17 to 5E18 |
| P+ GaAs doping (cm-3) | C doped; >1E19 |
| Defect density control (Diameter) | <100 cm-3 (D>10μm) |
Device Performance
| Parameter | Symbol | Typical |
| Forward Voltage@20mA | Vf | ~2.0V |
| Output Power @20mA | PO | ~0.5mW |
| Beam Divergence@20mA | 2θ | ~100 degree |
| Rise /Fall Time @20mA | Tr/Tf | 5ns/5ns |
| Aperture diameter | ɸ | 80μm |