1310/1550nm 2.5Gbps APD-TIA TO Package
Feature:
- InGaAs APD Chip for 2.5Gbps
- 50um large APD detecting area
- TO-46 with shart Cap Lens
- 2.5mm focal distance
- Cost-effective GPON ONu
Application:
The InGaAs APD with TIA is designed for high speed, high performance data communication and telecommunication applications. Excellent power coupling to single mode fiber enhance better sensitivity.
Parameter | Symbol | Conditions | Min. | Max. | Unit |
Operating Temperature | Top | — | -40 | 85 | °C |
Storage Temperature | Tstorage | — | -40 | +85 | °C |
Solder Reflow Temperature | STEM | 10sec Max | — | 260 | °C |
Optical Input Power | Pin | — | — | -7.0 | dBm |
Power Supply Voltage | Vcc | — | — | 3.6 | V |
Electrical and optical characteristics
Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
Supply Voltage | Vcc | — | 3.0 | 3.3 | 3.6 | V |
Supply Current | Icc | Vcc=3.3V, no loads | 15 | 20 | 24 | mA |
Breakdown Voltage | VBR | Id=10uA | 35 | 45 | 55 | V |
Operating Voltage | Vop | Vcc=3.3V | VBR-3 | V | ||
Sensitivity | S | λ=1490nm@2488.32Mbps, PRBS=233-1, ER=10dB, DER=10-10 | — | — | -31 | dBm |
Wavelength | λ | — | 1260 | 1310 | 1620 | nm |
Rise/Fall Time (20%~80%) | tr/tf | Pin=-30dBm, M=9 | — | 150/150 | — | ps |
VBR Temperature Coefficient | ∆VBR/T | Id=10ɥA, TC=25~70°C Id=10ɥA, TC=-40~70°C
| — 0.1 | 0.12 — | — 0.15 | %/°C %/°C |
Saturation Power | Psat | λ=1490nm@2488.32Mbps , PRBS=233-1, ER=10dB, DER=10-10 | -7.0 | — | — | dBm |