1310/1550nm 2.5Gbps APD-TIA TO Package

Feature:

  • InGaAs APD Chip for 2.5Gbps
  • 50um large APD detecting area
  • TO-46 with shart Cap Lens
  • 2.5mm focal distance
  • Cost-effective GPON ONu

Application:

The InGaAs APD with TIA is designed for high speed, high performance data communication and telecommunication applications.  Excellent power coupling to single mode fiber enhance better sensitivity.

ParameterSymbolConditionsMin.Max.Unit
Operating TemperatureTop-4085°C
Storage TemperatureTstorage-40+85°C
Solder Reflow TemperatureSTEM10sec Max260°C
Optical Input PowerPin-7.0dBm
Power Supply VoltageVcc3.6V

 

Electrical and optical characteristics

ParameterSymbolConditionsMin. Typ. Max.Unit
Supply VoltageVcc3.03.33.6V
Supply CurrentIccVcc=3.3V, no loads152024mA
Breakdown VoltageVBRId=10uA354555V
Operating VoltageVopVcc=3.3VVBR-3  V
SensitivitySλ=1490nm@2488.32Mbps, PRBS=233-1, ER=10dB, DER=10-10-31dBm
Wavelengthλ126013101620nm
Rise/Fall Time (20%~80%)tr/tfPin=-30dBm, M=9150/150ps
VBR Temperature Coefficient∆VBR/T

Id=10ɥA, TC=25~70°C

Id=10ɥA, TC=-40~70°C

 

0.1

0.12

0.15

%/°C

%/°C

Saturation PowerPsat

λ=1490nm@2488.32Mbps

, PRBS=233-1, ER=10dB, DER=10-10

-7.0dBm