650nm LD epiwafer
The 650nm LD epiwafer is comprised with InGaP/InAlGaP material multiple quantum-well as the active layer. Both pointer and DVD laser epiwafers are available.
Device Performance:
| Characteristics | Symbol | Conditions | Typical Value |
| Threshold Current | Ith | ~20 mA | |
| Operating Current | IOP | @5mW | ~32 mA |
| Wavelength | λ | 650~655nm | |
| Slope efficiency | η | @5mW | ~0.4 W/A |