Notice: Function _load_textdomain_just_in_time was called incorrectly. Translation loading for the presto-player domain was triggered too early. This is usually an indicator for some code in the plugin or theme running too early. Translations should be loaded at the init action or later. Please see Debugging in WordPress for more information. (This message was added in version 6.7.0.) in /home/q9kex8vpujyo6bum/public_html/wp-includes/functions.php on line 6121

Notice: Function _load_textdomain_just_in_time was called incorrectly. Translation loading for the business-company-elementor domain was triggered too early. This is usually an indicator for some code in the plugin or theme running too early. Translations should be loaded at the init action or later. Please see Debugging in WordPress for more information. (This message was added in version 6.7.0.) in /home/q9kex8vpujyo6bum/public_html/wp-includes/functions.php on line 6121
Gallium Oxide (Ga2O3) Epitaxial Wafer – SensLite

Gallium Oxide (Ga2O3) Epitaxial Wafer

Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has high advantage of reducting series-resistance of blue LED or UVB LED.

SiGaNβ-Ga2O3
Band gap: Eg (eV)1.13.44.8~4.9
Breakdown field: Ec (MV/cm)0.33.3~=8
Electron mobility: u (cm2/Vs)1,4001,200~=300
Dielectric constant: Es11.89.010
Baliga’s FOM: euEc318703,444*
*Ga2O3 has a larger Baliga’s FOM*1 than those of SiC and GaN.

Gallium Oxide (Ga2O3) has a wide range of industrial applications for very high, such as in power conditioners of inverters for driving the motors of electric vehicles and trains and in next-generation electrical power transmission systems.

Ga2O3_breakdown
Ga2O3_breakdown

For more information and evaluation, please contact epiwafer (at) senslite (dot) com (dot) tw.