Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has high advantage of reducting series-resistance of blue LED or UVB LED.
| Si | GaN | β-Ga2O3 | |
|---|---|---|---|
| Band gap: Eg (eV) | 1.1 | 3.4 | 4.8~4.9 |
| Breakdown field: Ec (MV/cm) | 0.3 | 3.3 | ~=8 |
| Electron mobility: u (cm2/Vs) | 1,400 | 1,200 | ~=300 |
| Dielectric constant: Es | 11.8 | 9.0 | 10 |
| Baliga’s FOM: euEc3 | 1 | 870 | 3,444* |
| *Ga2O3 has a larger Baliga’s FOM*1 than those of SiC and GaN. |
Gallium Oxide (Ga2O3) has a wide range of industrial applications for very high, such as in power conditioners of inverters for driving the motors of electric vehicles and trains and in next-generation electrical power transmission systems.
For more information and evaluation, please contact epiwafer (at) senslite (dot) com (dot) tw.