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Processed InP epiwafer

Description

Application

Wavelength Range

Processed InP base epiwafer RWG DFB laser (Ridge Waveguide) 1250nm~1630nm
BH-FP laser (Buried Heterostructure) 1250nm~1630nm
Photo-detector 1100nm~1600nm (InGaAs absorptive layer)

 Zn-diffusion Completed InGaAs-PD epiwafer

 

 

 

 

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