Two or three-inch epiwafers grown by MOVPE are available for GaAs photodiode (PD) fabrication.  The GaAs PD is widely used in the Gigabit Ethernet receiver or transceiver where laser’s wavelength is shorter than 870nm.   Epitaxial Capability  Parameters  Values

Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.  The active region comprises multiple quantum wells of InGaP/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P-

Two or three inches epiwafers grown by MOVPE are available for 850nm vertical cavity surface emitting laser (VCSEL) fabrication.  The active region comprises three quantum wells of GaAs/Al0.3Ga0.7 As sandwiched by AlGaAs layers to form a resonant cavity between