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Gallium Oxide (Ga2O3) Epitaxial Wafer

Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has high advantage of reducting series-resistance of blue LED or UVB LED.

SiGaNβ-Ga2O3
Band gap: Eg (eV)1.13.44.8~4.9
Breakdown field: Ec (MV/cm)0.33.3~=8
Electron mobility: u (cm2/Vs)1,4001,200~=300
Dielectric constant: Es11.89.010
Baliga’s FOM: euEc318703,444*
*Ga2O3 has a larger Baliga’s FOM*1 than those of SiC and GaN.

Gallium Oxide (Ga2O3) has a wide range of industrial applications for very high, such as in power conditioners of inverters for driving the motors of electric vehicles and trains and in next-generation electrical power transmission systems.

Ga2O3_breakdown
Ga2O3_breakdown

For more information and evaluation, please contact epiwafer (at) senslite (dot) com (dot) tw.