Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. It also has high advantage of reducting series-resistance of blue LED or UVB LED.
|Band gap: Eg (eV)||1.1||3.4||4.8~4.9|
|Breakdown field: Ec (MV/cm)||0.3||3.3||~=8|
|Electron mobility: u (cm2/Vs)||1,400||1,200||~=300|
|Dielectric constant: Es||11.8||9.0||10|
|Baliga’s FOM: euEc3||1||870||3,444*|
|*Ga2O3 has a larger Baliga’s FOM*1 than those of SiC and GaN.|
Gallium Oxide (Ga2O3) has a wide range of industrial applications for very high, such as in power conditioners of inverters for driving the motors of electric vehicles and trains and in next-generation electrical power transmission systems.
For more information and evaluation, please contact epiwafer (at) senslite (dot) com (dot) tw.