3’’ InP Substrate:  Specification is as below  Item  Specification  Unit  Growth Method/Grade  VGF/Prime (Epi-ready)  Dopant  S  Conductivity Type  N Type  Carrier Concentration  2~8E18cm-3  cm-3  Mobility  —  cm2/V·sec  Resistivity  —  Ω·cm  EPD  1. Average of the 69 pts must be

Downgrade LED Epiwafer Size 2”, 2.5”, 3” 4” (2 inches, 2.5 inches, 3 inches and 4 inches)  Stocks ready for bulk order.  General specification: Wavelength Wd:400-470 Forward Current: Iv:100-400 Forward Voltage: Vf2<4  

2’’ Zn-diffusion completed epiwafer by MOVPE is available.  Only AR coating and metallization process are needed to finish P-side chip process. Epitaxial Capability  Parameters  Values  Thickness control  Better than ±5%  Thickness uniformity  Better than ±2% at the inner 40mm