Two or three inches epiwafers grown by MOVPE are available for 850nm vertical cavity surface emitting laser (VCSEL) fabrication. The active region comprises three quantum wells of GaAs/Al0.3Ga0.7 As sandwiched by AlGaAs layers to form a resonant cavity between P- and N-DBR mirrors. Since N-DBR has higher reflection, the light is emitted from the P-DBR mirror to from the laser beam. We offer two types of wafers for making either ion-implanted or oxide-confined lasing aperture.
Epitaxial Capability
| Parameters | Values |
| SB Center | ±10nm of specified value |
| Thickness uniformity | Better than ±2.5% |
| PL Wavelength uniformity | ~±1.5nm at inner 40mm |
| Doping control | 30% |
| P-AlGaAs doping (cm-3) | C doped; 5E17 to 1E20 |
| N-AlGaAs doping (cm-3) | Si doped; 1E17 to 5E18 |
| Al composition in AlxGa1-xAs | 95% to 5% |
| Defect density control (Diameter) | <100cm-2 (D>10μm) |
Device Performance
| Parameter | Symbol | Typical |
| Threshold Current @25℃ | Ith | <4mA (Aperture~10μm) |
| Wavelength | λ | 845~855nm |
| Slope efficiency | η | >0.3 W/A |
| Serial resistance | Rs | <50Ω |
| Operating temperature | 0~80℃ | |
| Type | Oxidation Confined Aperture |
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