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GaAs Base Epiwafer

DescriptionApplicationWavelength RangeWafer Size
GaAs Base EpiwaferVisible Laser Diode635nm, 650nm~780nm3″, 4″
Infrared Laser Diode808nm, 980nm and others from 800nm~1064nm3″, 4″, 6″
Vertical Cavity Surface Emitting Laser (VCSEL)650nm, 850nm, 600nm~1060nm 3″, 4″, 6″
Photo-dector (PD)600nm~850nm 3″, 4″, 6″
High Power LDCustomization 3″, 4″, 6″

GaAs based wafer is fully customizable.  Please provide your epi-structure for review and evaluation, we’ll provide comments and suggestions before production.  For more information, please contact us directly at epiwafer (at) senslite (dot) com (dot) tw.