The 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1mW.  Good uniformity of wavelength around 2’’ wafer can be achieved. Device Performance:  Characteristics  Symbol  Conditions  Typical Value

650nm LD epiwafer The 650nm LD epiwafer is comprised with InGaP/InAlGaP material multiple quantum-well as the active layer.  Both pointer and DVD laser epiwafers are available. Device Performance:  Characteristics  Symbol  Conditions  Typical Value  Threshold Current  Ith  ~20 mA  Operating

VCSEL Epi Wafer (New Released) FP-Dip Wavelength: 840nm~860nm QWs Materials: AlGaAs/ GaAs DBR Materials: AlGaAs/ AlGaAs Thickness: 625±25μm Substrate: GaAs Wafer Size: 3 inches   Feature: Grown by MOCVD High Reliability Wavelength uniformity Customized wavelength Customized Structure