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808nm Laser Epiwafer

808nm Laser Epiwafer

The 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1mW.  Good uniformity of wavelength around 2’’ wafer can be achieved.

Device Performance:

 Characteristics  Symbol  Conditions  Typical Value
 Threshold Current  Ith  without coating  <150 mA
 Operating Current  IOP  @250mW  546 mA
 Wavelength  λ  @250mW  ~808nm
 Slope efficiency  η  without coating  ~0.55 W/A
 ※ Device structure: 50μm x 700μm BA Laser; as cleaved facet @ R.T.