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InGaAs PIN Epi wafer for 2.5G application

InGaAs PIN Epiwafer stocks available.  Order now for faster lead-time to meet project deadline. Standard InGaAs PIN Epiwafer structure: 0 InP Substrate 1 U-InP Layer(Concentration) 2 U-InGaAs Layer(Concentration) 3 U-InP Layer(Concentration) 4 U-InGaAs Layer(Concentration) # Lattice Mismatch

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1300nm DFB Laser

  Description Application Wavelength Range InP Base epiwafer FP laser ~1310nm; ~1550nm；~1900nm DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer)    

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Wireless Microscope

Wireless Otoscope (Microscope) OT-2000 Features    Product Type: Wireless Handheld Microscope ( for displaying and picture taking ) TVOutput: NTSC/PAL Computer Output: USB Transmitting power: <10dBm Transmission frequency: 2.4Ghz Transmission distance: 10M ( without blocks ) Memory: 1G micro

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Various type of MEMS package

SensLite has been providing services for the LED, III-Vs, Optical Communication and MEMS semiconductor industries for more than 17 years and counting.

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