1300nm DFB Laser for High Speed Transmition Description Application Wavelength Range InP Base epiwafer FP laser ~1310nm; ~1550nm；~1900nm DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer)       InGaAs PIN Epiwafer for

5″ Mono 2BB 72pc Cells 180 – 195 Wp   Technical Specification Nominal power 180– 195 Wp Positive sorting +5 / -0 Wp Dimension 1,508 mm × 809 mm × 38.1 mm / 62.2″ x 31.9″ x 1.5″ Weight

808nm Laser Epiwafer The 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1mW.  Good uniformity of wavelength around 2’’ wafer can be achieved. Device Performance:  Characteristics  Symbol