Epiwafer

InP Base epiwafer

Description Application Wavelength Range InP Base epiwafer FP laser ~1310nm; ~1550nm；~1900nm DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer)  

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Epiwafer, OptoCom

GaAs Base Epiwafer

Description Application Wavelength Range GaAs Base epiwafer Visible LD 635, 650~780nm Infrared LD 808nm, 980nm and others in 800~1064nm Vertical Cavity Surface Emitting Laser (VCSEL); RCLED 650nm, 850nm, 850~1100nm Double junction solar cell 670nm/870nm Photo-detector <870nm (GaAs absorptive layer)

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LED

Patterned-Sapphire Substrate Process (PSS Process for LED)

Patterned-Sapphire Substrate Process Service Available Patterned Sapphire Substrates for LED enhancement Patterned Sapphire Wafer Size for 2-inch, 4-inches and 6-inches wafer . Benefit of PSS-Based LED: More Efficient More effective light sources. Higher Gross Margins [contact-form-7 id=”2564″ title=”Contact”]

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Various type of MEMS package

SensLite has been providing services for the LED, III-Vs, Optical Communication and MEMS semiconductor industries for more than 17 years and counting.

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