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GaAs Base Epiwafer

Description

Application

Wavelength Range

GaAs Base epiwafer Visible LD 635, 650~780nm
Infrared LD 808nm, 980nm and others in 800~1064nm
Vertical Cavity Surface Emitting Laser (VCSEL); RCLED 650nm, 850nm, 850~1100nm
Double junction solar cell 670nm/870nm
Photo-detector <870nm (GaAs absorptive layer)