OEM InP Base epiwafer Description Application Wavelength Range InP Base epiwafer FP laser ~1310nm; ~1550nm；~1900nm DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer)  

OEM GaAs Base Epiwafer Description Application Wavelength Range GaAs Base epiwafer Visible LD 635, 650~780nm Infrared LD 808nm, 980nm and others in 800~1064nm Vertical Cavity Surface Emitting Laser (VCSEL); RCLED 650nm, 850nm, 850~1100nm Double junction solar cell 670nm/870nm Photo-detector

Description Application Wavelength Range Processed InP base epiwafer RWG DFB laser (Ridge Waveguide) 1250nm~1630nm BH-FP laser (Buried Heterostructure) 1250nm~1630nm Photo-detector 1100nm~1600nm (InGaAs absorptive layer)