Gallium Oxide (Ga2O3) Epitaxial Wafer for UV-B LED application Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost.
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808nm High Power LD with low energy consumption epiwafer Available We have just released a standard 808nm high power epiwafer strcuture availabe for order and evaluation. Our standard structure is ideal for low energy consumption range from 300mW up
Read MoreLiDAR/Imaging MEMS Dev Kit II (P/N: DK-027) Medium diameter mirror size (2.0mm to 2.4mm), large angle MEMS mirrors, typically used in coaxial designs with both illumination/transmit and sense/receive paths going through the MEMS mirror. Kit content: Four units of
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