3’’ InP Substrate:
Specification is as below
| Item | Specification | Unit |
| Growth Method/Grade | VGF/Prime (Epi-ready) | |
| Dopant | S | |
| Conductivity Type | N Type | |
| Carrier Concentration | 2~8E18cm-3 | cm-3 |
| Mobility | — | cm2/V·sec |
| Resistivity | — | Ω·cm |
| EPD | 1. Average of the 69 pts must be >5002. The points of EPD < 500 must be ≧60 pts | cm-2 |
| Thickness | 625±25 | μm |
| Diameter | 76.2±0. | mm |
| Orientation | (100) 0.075∘off towards (110)±0.025∘ (Prefer 0.05∘~0.075∘), Alpha angle: 225∘ | |
| Device surface side | EJ | |
| Orientation Flat | (0-1-1)±0.05∘ Length: 22±2 | mm |
| Index Flat | (0-11)±0.5∘ Length: 11±1 | mm |
| Surface Finish | Front: Mirror PolishedBack: Lapped and Etched | |
| WARP | ≦10 | μm |
| BOW | ≦10 | μm |
| TTV | ≦10 | μm |
| TIR | N/A | μm |
| Laser marking | Front side opposite major flat | |
| Box | – | |
| Packaging | Single pack with N2 gas |
