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Epiwafer, Press, Uncategorized

Gallium Oxide (Ga2O3) Epitaxial Wafer for UV-B LED application

Gallium Oxide (Ga2O3) Epitaxial Wafer for UV-B LED application Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost.

808nm High Power LD with low energy consumption epiwafer Available

808nm High Power LD with low energy consumption epiwafer Available We have just released a standard 808nm high power epiwafer strcuture availabe for order and evaluation. Our standard structure is ideal for low energy consumption range from 300mW up

InP Based wafer 2”, 3”, 4”

Description Application Wavelength Range InP Base epiwafer 2.5G/ 10G FP laser ~1310nm; ~1550nm；~1900nm 2.5G/ 10G/25G DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 2.5G/10G/25G PIN PD/C-PD 2.5G/10G APD/C-APD 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer)