OptoCom -

Epiwafer, Press

Optical Communication / Telecommunication Epitaxial Wafers

DFB Epiwafer– 25G/10G/2.5G– 1.3um, 1.5um– Grating Completed * Holography *E-beam *Nano Imprint– P-metal Completed APD Epiwafer– 25G/10G/2.5G– Zn-diffusion completed FP Epiwafer-10G/ 2.5G– 1.3um, 1.5um PIN PD Epiwafer– 50G/ 25G/10G– Zn-diffusion competed EML Epiwafer– 50G/10G-1.3um, 1.55um, 1.577um– Grating Completed *

Epitaxial Wafers for Data Center

DFB Epiwafer– 25G/10G– CWDM4, PAM4– Grating Completed * Holography *E-beam *Nano Imprint– P-metal Completed High Power CW Laser Epiwafer– Grating Completed *E-beam *Nano Imprint– P-metal Completed VCSEL Epiwafer– 50G/25G– 850nm Silicon Photonics Epiwafer– AIQ-MQW DFB LD base wafer– BH

Gallium Oxide (Ga2O3) Epitaxial Wafer

Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation