808nm Laser Epiwafer
The super high efficiency 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer. The Maximum output power for fabricated laser can be 1W. Good uniformity of wavelength around 2’’ or 3” wafer can be achieved. Please refer below for the chip performance.
Other wavelenght or epistructure is also available for customization upon your request.
|Threshold Current||Ith||without coating||<150 mA|
|Operating Current||IOP||@250mW||546 mA|
|Slope efficiency||η||without coating||~0.55 W/A|
|※ Device structure: 50μm x 700μm BA Laser; as cleaved facet @ R.T.|