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808nm High Power Laser Diode (LD) IV Curve

Super High efficiency 808nm Laser Epiwafer available

808nm Laser Epiwafer

The super high efficiency 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1W.  Good uniformity of wavelength around 2’’ or 3” wafer can be achieved. Please refer below for the chip performance.

Other wavelenght or epistructure is also available for customization upon your request.

Device Performance:

 Characteristics Symbol Conditions Typical Value
 Threshold Current Ith without coating <150 mA
 Operating Current IOP @250mW 546 mA
 Wavelength λ @250mW ~808nm
 Slope efficiency η without coating ~0.55 W/A
 ※ Device structure: 50μm x 700μm BA Laser; as cleaved facet @ R.T.
High Power High efficiency 808nm LD epiwafer Available for evaluation
High Power High efficiency 808nm LD epiwafer Available for evaluation