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1300nm DFB Laser

Feature:

  • High quality reliable Epiwafer
  • Mass Production product
  • Used by leading companies
  • Competitive price
  • Small minimum trial order quantity

Specification:

(No.) (Item Name) (Value for Customer) (Unit) (DP) (Test Condition)     (Note)
0 InP Substrate(Material: M01* TBD cm-3 — — 2’’ wafer, 350±25mm
1 N-InP Buffer Layer,( Concentration) TBD μm(cm-3) ±10% (±20%) C-V Test On test wafer
2 N-In0.53AlxGa0.47-xAs (x:0.36à0.44) Linear Graded( Concentration) TBD nm(cm-3) ±10% (±20%) — —
3 N-In0.52Al0.48As (Concentration) TBD nm(cm-3) ±10% (±20%) — —
4 U-In0.53AlxGa0.47-xAs (x:0.44à0.33) Linear Graded TBD nm ±10% — —
5 MQW(λPL) TBD nm(nm) ±10% (±5) DCXD ,  PL measurement On epi-waferOn test wafer
6 U-In0.53AlxGa0.47-xAs (x:0.36à0.44) Linear Graded TBD nm ±10% — —
7 P-In0.52Al0.48As (Concentration) TBD nm(cm-3) ±10%(±20%) — —
8 P-InP Layer(Concentration) TBD nm(cm-3) ±10%(±20%) — —
9 P-1.15μm InGaAsP (Concentration) TBD nm(cm-3) ±10% (±20%) — —
10 P-InP Layer(Concentration) TBD nm(cm-3) ±10%(±20%)
11 P-1.2μm InGaAsP (Concentration) TBD nm(cm-3) ±10% (±20%) — —
P-InP Layer,(Concentration) TBD nm(cm-3) ±10% (±20%)
# Lattice Mismatch <+1000 ppm — DCXD measurement On epi-wafer