2’’ Zn-diffusion completed epiwafer by MOVPE is available. Only AR coating and metallization process are needed to finish P-side chip process.
Epitaxial Capability
| Parameters | Values |
| Thickness control | Better than ±5% |
| Thickness uniformity | Better than ±2% at the inner 40mm |
| N –InP doping (cm-3) | Si-doped, 1E16 to 5E17 |
| N– -InP doping (cm-3) | Si-doped, 5E15 to 1E16 |
| P –InP doping (cm-3) | Zn-doped, >2E18 |
| P+ -InGaAs doping (cm-3) | Zn-doped, >1E19 |
| i-InGaAsP background C.C (cm-3) | <2E15 (special requested absorption layer) |
| i-InGaAs background C.C. (cm-3) | <1E15 |
| Defect density control (Diameter) | <50cm-3(D>10μm) |
| Refraction index | SiO2: 1.45±0.05 /SiNx: 2.05±0.1 |
Device Performance
| Parameter | Symbol | Typical |
| Dark Current @-5V |
Id |
<500pA |
| Capacitance @-5V |
CP |
<6pF |
| Responsivity |
Res |
~0.9 A/W (With AR coating) |
| Break down Voltage @10μA |
VR |
>-30V |
| Serial resistance |
Rs |
<40Ω |
| Good device yield | — | >80% |
| Zn diffused, planar type PIN |
300 μm aperture |
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