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2.5G InGaAs APD Chip

 General Description

This InGaAs/InP avalanche photodiode (APD) chip was designed for 2.5Gbps optical communication use. It has a low dark current, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

Features

  • Operation at 1000~1650nm
  • Low dark current
  • Low capacitance
  • Linear response
  • Low cost

Applications

  • ·1.25 / 2.5 / 3.125 Gbps optical receiver for long-distance optical communication.

Absolute Maximum Ratings

Parameter Symbol  Rating  Unit
Reverse voltage VR VB V
 Reverse current      mA
 Operating temperature range

TOPR

-40 to +85

 Storage temperature range

TSTG

-40 to +85

Electro-Optical Characteristics (Tc=25℃)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Dark Current

ID

VR = 0.9 VB

1

nA

Capacitance

CPD

VR = 0.9 VB

0.5

pF

Responsivity1)

R

VR = 0.95 VB(1550nm)

7

A/W

Breakdown voltage

 VB

ID = 10 uA, T=25℃

 30

 45

 55

 V

Temperature coefficient

γ

ΔVB/ΔT

80

mV/℃

Gain-bandwidth product

 GBP

 30

 GHz

Operating range2)

λ

1.0

1.65

µm

1) The responsivity when M=1 is calculated as 0.9A/W, but there is no way to measure the voltage of unity gain.

2) The APD chip can be operated at the wavelength range between 1.0 and 1.65 µm with different responsivity.

Dimension Parameter

Parameter

Symbol

Typ.

Unit

Light receiving area diameter

D

50

 µm

 Chip size

 –

 300×300

  µm2

Bonding pad diameter

70

 µm

 Chip thickness

 t

 125 ± 15

  µm