1300nm DFB Laser for High Speed Transmition
|
Description |
Application |
Wavelength Range |
| InP Base epiwafer | FP laser | ~1310nm; ~1550nm；~1900nm |
| DFB laser | 1270nm~1630nm | |
| Avalanche photo-detector | 1250nm~1600nm | |
| Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer) |
InGaAs PIN Epiwafer for High Speed Receivers
Standard InGaAs PIN Epiwafer structure:
| 0 | InP Substrate |
| 1 | U-InP Layer(Concentration) |
| 2 | U-InGaAs Layer(Concentration) |
| 3 | U-InP Layer(Concentration) |
| 4 | U-InGaAs Layer(Concentration) |
| # | Lattice Mismatch |
