Super CMC/MCM
Multi Layer Cu/Mo Clad Metal for LED Epi Wafer Substrate

• High Thermal Conductivity : 200～350w/mk
• Low Thermal Expansion : 6～10ppm/℃
• Thickness :≧90μm

Application:
LED Epi Wafer Substrate , etc.

Introduction:

Our newly developed Clad material is built-up with multi-layers of Cu and Mo. By changing the thickness of Cu
foil and Mo foil, the coefficient of thermal expansion is freely controlled ringing from 6ppm/℃ to 10ppm /℃ in
order to match the thermal expansion coefficient of GaN and AlGalnP device materials.
Consisting of only Cu and Mo, it is successful in obtaining high thermal conductivity of 200W/mk or better.
Thickness can be made up to 90μm, It is intended to be utilized as the heat radiation substrate of LED
compound semiconductor wafers, or heat sink substrate, as a submount, in various semiconductor-related
industries