Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication. The active region comprises multiple quantum wells of InGaP/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors. Since N-DBR has higher refection, the light is emitted from the P-DBR mirror. 650nm RCLED can be used as light source in plastic optical fiber (POF) communication application.
Epitaxial Capability
| Parameters | Values |
| PL wavelength | ±5nm of specified value |
| Etlon dip | ±10nm of specified value |
| SB center | ±10nm of specified value |
| Thickness uniformity | Better than ±2.5% |
| Doping control | ~±30% |
| P-AlGaAs doping (cm-3) | C doped; 5E17 to 1E201 |
| N-AlGaAs doping (cm-3) | Si doped; 1E17 to 5E18 |
| P+ GaAs doping (cm-3) | C doped; >1E19 |
| Defect density control (Diameter) | <100 cm-3 (D>10μm) |
Device Performance
| Parameter | Symbol | Typical |
| Forward Voltage@20mA | Vf | ~2.0V |
| Output Power @20mA | PO | ~0.5mW |
| Beam Divergence@20mA | 2θ | ~100 degree |
| Rise /Fall Time @20mA | Tr/Tf | 5ns/5ns |
| Aperture diameter | ɸ | 80μm |
