□ Features:
· Long operation life
· High anti-ESD level
· 100%probing test
· Passivation layer on top
· High radiant flux
|
Mechanical Specifications |
||
|
Description |
Dimension |
Tolerance |
|
P-N Junction Area (μm) |
220*535 |
+- 30 |
|
Chip Area (μm) |
250*570 |
+- 30 |
|
Chip Thickness (μm) |
110 |
15 |
|
Au Bond Pad Area Anode(+) (μm) |
170*160 |
+- 20 |
|
Au Bond Pad Thicknesses (μm) |
0.5 |
0.1 |
|
Au Bond Pad Area Cathode(-) (μm) |
230*165 |
+- 30 |
|
Bottom Area (μm) |
250*570 |
+- 30 |
*Electro-optical Characteristlcs at 25℃(1)
|
Parameter |
Symbol |
Cindition |
Min. |
Typ. |
Max. |
Unit |
|
|
Forward voitage |
Vfi |
If=10uA |
2.0 |
|
|
V |
|
|
Vf2 |
If=20mA |
2.8 |
|
3.8 |
V |
||
|
Reverse current |
Ir |
Vr=5V |
|
|
2.0 |
μA |
|
|
Dominant wavelength(2) |
Λd |
If=20mA |
450 |
|
460 |
nm |
|
|
Spectral half-width |
△λ |
If=20mA |
|
25 |
|
nm |
|
|
Radiant flux(3)(4) |
Po |
R25 |
If=20mA |
25.5 |
|
27 |
mW |
|
R26 |
27 |
28.5 |
|||||
