40G  850nm PIN PD Chip

• 40 Gb/s SONET/SDH OC-768/STM-256 short reach
• 100 Gb/s Ethernet
• 25 Gb/s 850nm applications such as Infiniband, Fibre Channel & CEI 25G/28G
• Digital applications up to 43 Gb/s baud rate
• RF photonics applications requiring low noise and high conversion gain
• Military communications

Chip configuration:

1. Both anode and cathode contacts on top (epi) surface, P-bond pad on left.

2. Dimension:

300 um (width) x 1000 um (length) x 130 um (thickness) with 250um pitch Tolerance: +/-12.5um

Per channel dimension: 250 um (width) x 300 um (length)

3. Bond pad size: 60 x 60 um square