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Ga2O3 Breakdown Voltage vs. SiC vs. GaN

Gallium Oxide (Ga2O3) Epitaxial Wafer

Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics make Ga2O3 a promising material for next-generation power electronics. […]

Ga2O3 substrate advantange for UVB LED

Gallium Oxide (Ga2O3) Epitaxial Wafer for UV-B LED application

Gallium Oxide (Ga2O3) Epitaxial Wafer for UV-B LED application Gallium oxide (Ga2O3) has a large band-gap energy, and it can be grown from a melt source. As a result, large, high-quality single-crystal substrates can be manufactured at low cost. These characteristics […]

808nm High Power Laser Diode (LD) IV Curve

808nm High Power LD with low energy consumption epiwafer Available

808nm High Power LD with low energy consumption epiwafer Available We have just released a standard 808nm high power epiwafer strcuture availabe for order and evaluation.   Our standard structure is ideal for low energy consumption range from 300mW up to 1000mW  […]