{"id":3573,"date":"2013-12-06T11:25:03","date_gmt":"2013-12-06T03:25:03","guid":{"rendered":"http:\/\/senslite.com.tw\/Home\/?p=3573"},"modified":"2013-12-11T11:25:22","modified_gmt":"2013-12-11T03:25:22","slug":"650nm-resonant-cavity-light-emitting-diode-rcled","status":"publish","type":"post","link":"https:\/\/senslite.com.tw\/Home\/index.php\/2013\/12\/06\/650nm-resonant-cavity-light-emitting-diode-rcled\/","title":{"rendered":"650nm RCLED"},"content":{"rendered":"<p>Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.\u00a0 The active region comprises multiple quantum wells of InGaP\/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors.\u00a0 Since N-DBR has higher refection, the light is emitted from the P-DBR mirror.\u00a0 650nm RCLED can be used as light source in plastic optical fiber (POF) communication application.<\/p>\n<p>&nbsp;<\/p>\n<p><b>Epitaxial Capability<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"279\"><b>\u00a0Parameters<\/b><\/td>\n<td valign=\"top\" width=\"279\"><b>\u00a0Values<\/b><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0PL wavelength<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b15nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Etlon dip<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b110nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0SB center<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b110nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Thickness uniformity<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Better than \u00b12.5%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Doping control<\/td>\n<td valign=\"top\" width=\"279\">\u00a0~\u00b130%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0P-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0C doped; 5E17 to 1E201<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0N-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Si doped; 1E17 to 5E18<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0P<sup>+<\/sup> GaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0C doped; &gt;1E19<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Defect density control (Diameter)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0&lt;100 cm<sup>-3<\/sup> (D&gt;10\u03bcm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p><b>Device Performance<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Parameter<\/strong><\/td>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Symbol<\/strong><\/td>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Typical<\/strong><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Forward Voltage@20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0V<sub>f<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a0~2.0V<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Output Power @20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0P<sub>O<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a0~0.5mW<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Beam Divergence@20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a02\u03b8<\/td>\n<td valign=\"top\" width=\"186\">\u00a0~100 degree<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Rise \/Fall Time @20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0T<sub>r<\/sub>\/T<sub>f<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a05ns\/5ns<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Aperture diameter<\/td>\n<td valign=\"top\" width=\"186\">\u00a0\u0278<\/td>\n<td valign=\"top\" width=\"186\">\u00a080\u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.\u00a0 The active region comprises multiple quantum wells of InGaP\/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors.\u00a0 Since N-DBR has higher refection, the light is emitted from the P-DBR mirror.\u00a0 [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-3573","post","type-post","status-publish","format-standard","hentry"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3573","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/comments?post=3573"}],"version-history":[{"count":4,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3573\/revisions"}],"predecessor-version":[{"id":3624,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3573\/revisions\/3624"}],"wp:attachment":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/media?parent=3573"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/categories?post=3573"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/tags?post=3573"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}