{"id":3568,"date":"2013-12-06T11:19:18","date_gmt":"2013-12-06T03:19:18","guid":{"rendered":"http:\/\/senslite.com.tw\/Home\/?p=3568"},"modified":"2013-12-11T11:25:35","modified_gmt":"2013-12-11T03:25:35","slug":"850nm-vertical-cavity-surface-emitting-laser-vcsel","status":"publish","type":"post","link":"https:\/\/senslite.com.tw\/Home\/index.php\/2013\/12\/06\/850nm-vertical-cavity-surface-emitting-laser-vcsel\/","title":{"rendered":"850nm VCSEL"},"content":{"rendered":"<p>Two or three inches epiwafers grown by MOVPE are available for 850nm vertical cavity surface emitting laser (VCSEL) fabrication.\u00a0 The active region comprises three quantum wells of GaAs\/Al<sub>0.3<\/sub>Ga<sub>0.7<\/sub> As sandwiched by AlGaAs layers to form a resonant cavity between P- and N-DBR mirrors. Since N-DBR has higher reflection, the light is emitted from the P-DBR mirror to from the laser beam.\u00a0 We offer two types of wafers for making either ion-implanted or oxide-confined lasing aperture.<\/p>\n<p><b>Epitaxial Capability<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"279\"><b>\u00a0Parameters<\/b><\/td>\n<td valign=\"top\" width=\"279\"><b>\u00a0Values<\/b><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0SB Center<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b110nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Thickness uniformity<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Better than \u00b12.5%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0PL Wavelength uniformity<\/td>\n<td valign=\"top\" width=\"279\">\u00a0~\u00b11.5nm at inner 40mm<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Doping control<\/td>\n<td valign=\"top\" width=\"279\">\u00a030%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0P-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0C doped; 5E17 to 1E20<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0N-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Si doped; 1E17 to 5E18<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Al composition in Al<sub>x<\/sub>Ga<sub>1-x<\/sub>As<\/td>\n<td valign=\"top\" width=\"279\">\u00a095% to 5%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Defect density control (Diameter)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0&lt;100cm<sub>-2 <\/sub>(D&gt;10\u03bcm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n<p><b>Device Performance<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"186\"><b>\u00a0Parameter<\/b><\/td>\n<td valign=\"top\" width=\"186\"><b>\u00a0Symbol<\/b><\/td>\n<td valign=\"top\" width=\"186\"><b>\u00a0Typical<\/b><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Threshold Current @25\u2103<\/td>\n<td valign=\"top\" width=\"186\">\u00a0I<sub>th<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a0&lt;4mA (Aperture~10\u03bcm)<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Wavelength<\/td>\n<td valign=\"top\" width=\"186\">\u00a0\u03bb<\/td>\n<td valign=\"top\" width=\"186\">\u00a0845~855nm<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Slope efficiency<\/td>\n<td valign=\"top\" width=\"186\">\u00a0\u03b7<\/td>\n<td valign=\"top\" width=\"186\">\u00a0&gt;0.3 W\/A<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Serial resistance<\/td>\n<td valign=\"top\" width=\"186\">\u00a0Rs<\/td>\n<td valign=\"top\" width=\"186\">\u00a0&lt;50\u03a9<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Operating temperature<\/td>\n<td valign=\"top\" width=\"186\"><\/td>\n<td valign=\"top\" width=\"186\">\u00a00~80\u2103<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Type<\/td>\n<td valign=\"top\" width=\"186\">\u00a0Oxidation Confined Aperture<\/td>\n<td valign=\"top\" width=\"186\"><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"<p>Two or three inches epiwafers grown by MOVPE are available for 850nm vertical cavity surface emitting laser (VCSEL) fabrication.\u00a0 The active region comprises three quantum wells of GaAs\/Al0.3Ga0.7 As sandwiched by AlGaAs layers to form a resonant cavity between P- and N-DBR mirrors. Since N-DBR has higher reflection, the light is emitted from the P-DBR [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[],"tags":[],"class_list":["post-3568","post","type-post","status-publish","format-standard","hentry"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3568","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/comments?post=3568"}],"version-history":[{"count":4,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3568\/revisions"}],"predecessor-version":[{"id":3625,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/posts\/3568\/revisions\/3625"}],"wp:attachment":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/media?parent=3568"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/categories?post=3568"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/tags?post=3568"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}