{"id":3608,"date":"2013-12-11T11:14:11","date_gmt":"2013-12-11T03:14:11","guid":{"rendered":"http:\/\/senslite.com.tw\/Home\/?page_id=3608"},"modified":"2018-04-26T11:57:29","modified_gmt":"2018-04-26T03:57:29","slug":"650nm-resonant-cavity-light-emitting-diode-rcled","status":"publish","type":"page","link":"https:\/\/senslite.com.tw\/Home\/index.php\/datacom\/epitaxial-wafer-epiwafer\/gaas-base-epiwafer\/650nm-resonant-cavity-light-emitting-diode-rcled\/","title":{"rendered":"650nm Resonant cavity light emitting diode (RCLED)"},"content":{"rendered":"<p>650nm Resonant cavity light emitting diode (RCLED)<\/p>\n<p>Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.\u00a0 The active region comprises multiple quantum wells of InGaP\/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors.\u00a0 Since N-DBR has higher refection, the light is emitted from the P-DBR mirror.\u00a0 650nm RCLED can be used as light source in plastic optical fiber (POF) communication application.<\/p>\n<p>&nbsp;<\/p>\n<p><b>Epitaxial Capability<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"279\"><b>\u00a0Parameters<\/b><\/td>\n<td valign=\"top\" width=\"279\"><b>\u00a0Values<\/b><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0PL wavelength<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b15nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Etlon dip<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b110nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0SB center<\/td>\n<td valign=\"top\" width=\"279\">\u00a0\u00b110nm of specified value<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Thickness uniformity<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Better than \u00b12.5%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Doping control<\/td>\n<td valign=\"top\" width=\"279\">\u00a0~\u00b130%<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0P-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0C doped; 5E17 to 1E201<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0N-AlGaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0Si doped; 1E17 to 5E18<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0P<sup>+<\/sup> GaAs doping (cm<sup>-3<\/sup>)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0C doped; &gt;1E19<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"279\">\u00a0Defect density control (Diameter)<\/td>\n<td valign=\"top\" width=\"279\">\u00a0&lt;100 cm<sup>-3<\/sup> (D&gt;10\u03bcm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p><b>Device Performance<\/b><\/p>\n<table border=\"1\" cellspacing=\"0\" cellpadding=\"0\">\n<tbody>\n<tr>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Parameter<\/strong><\/td>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Symbol<\/strong><\/td>\n<td valign=\"top\" width=\"186\"><strong>\u00a0Typical<\/strong><\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Forward Voltage@20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0V<sub>f<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a0~2.0V<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Output Power @20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0P<sub>O<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a0~0.5mW<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Beam Divergence@20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a02\u03b8<\/td>\n<td valign=\"top\" width=\"186\">\u00a0~100 degree<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Rise \/Fall Time @20mA<\/td>\n<td valign=\"top\" width=\"186\">\u00a0T<sub>r<\/sub>\/T<sub>f<\/sub><\/td>\n<td valign=\"top\" width=\"186\">\u00a05ns\/5ns<\/td>\n<\/tr>\n<tr>\n<td valign=\"top\" width=\"186\">\u00a0Aperture diameter<\/td>\n<td valign=\"top\" width=\"186\">\u00a0\u0278<\/td>\n<td valign=\"top\" width=\"186\">\u00a080\u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"<p>650nm Resonant cavity light emitting diode (RCLED) Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.\u00a0 The active region comprises multiple quantum wells of InGaP\/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors.\u00a0 Since N-DBR has higher refection, the [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":2872,"menu_order":1,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-3608","page","type-page","status-publish","hentry"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/pages\/3608","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/comments?post=3608"}],"version-history":[{"count":1,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/pages\/3608\/revisions"}],"predecessor-version":[{"id":3609,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/pages\/3608\/revisions\/3609"}],"up":[{"embeddable":true,"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/pages\/2872"}],"wp:attachment":[{"href":"https:\/\/senslite.com.tw\/Home\/index.php\/wp-json\/wp\/v2\/media?parent=3608"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}