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2.5G InGaAs APD Chip

General Description

This InGaAs/InP avalanche photodiode (APD) chip was designed for 2.5Gbps optical communication use. It has a low dark current, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.


  • Operation at 1000~1650nm
  • Low dark current
  • Low capacitance
  • Linear response
  • Low cost


  • ·1.25 / 2.5 / 3.125 Gbps optical receiver for long-distance optical communication.

Absolute Maximum Ratings

Parameter Symbol  Rating  Unit
Reverse voltage VR VB V
 Reverse current      mA
 Operating temperature range TOPR -40 to +85
 Storage temperature range TSTG -40 to +85

Electro-Optical Characteristics (Tc=25℃)

Parameter Symbol Test Condition Min. Typ. Max. Unit
Dark Current ID VR = 0.9 VB 1 nA
Capacitance CPD VR = 0.9 VB 0.5 pF
Responsivity1) R VR = 0.95 VB(1550nm) 7 A/W
Breakdown voltage  VB ID = 10 uA, T=25℃  30  45  55  V
Temperature coefficient γ ΔVB/ΔT 80 mV/℃
Gain-bandwidth product  GBP  30  GHz
Operating range2) λ 1.0 1.65 µm

1) The responsivity when M=1 is calculated as 0.9A/W, but there is no way to measure the voltage of unity gain.

2) The APD chip can be operated at the wavelength range between 1.0 and 1.65 µm with different responsivity.

Dimension Parameter

Parameter Symbol Typ. Unit
Light receiving area diameter D 50  µm
 Chip size  –  300×300   µm2
Bonding pad diameter 70  µm
 Chip thickness  t  125 ± 15   µm




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