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InP Based wafer 2”, 3”, 4”

Description

Application

Wavelength Range

InP Base epiwafer 2.5G/ 10G FP laser ~1310nm; ~1550nm;~1900nm
2.5G/ 10G/25G DFB laser 1270nm~1630nm
Avalanche photo-detector 1250nm~1600nm
Photo-detector

2.5G/10G/25G PIN PD/C-PD

2.5G/10G APD/C-APD

1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1400nm (InGaAsP absorptive layer)

 

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