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InP Based wafer 2”, 3”, 4”

Description Application Wavelength Range InP Base epiwafer 2.5G/ 10G FP laser ~1310nm; ~1550nm;~1900nm 2.5G/ 10G/25G DFB laser 1270nm~1630nm Avalanche photo-detector 1250nm~1600nm Photo-detector 2.5G/10G/25G PIN PD/C-PD 2.5G/10G APD/C-APD 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1400nm (InGaAsP absorptive layer)