General Description
This InGaAs/InP avalanche photodiode (APD) chip was designed for 2.5Gbps optical communication use. It has a low dark current, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
Features
- Operation at 1000~1650nm
- Low dark current
- Low capacitance
- Linear response
- Low cost
Applications
- ·1.25 / 2.5 / 3.125 Gbps optical receiver for long-distance optical communication.
Absolute Maximum Ratings
Parameter | Symbol | Rating | Unit |
Reverse voltage | VR | VB | V |
Reverse current | mA | ||
Operating temperature range |
TOPR |
-40 to +85 |
℃ |
Storage temperature range |
TSTG |
-40 to +85 |
℃ |
Electro-Optical Characteristics (Tc=25℃)
Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
Dark Current |
ID |
VR = 0.9 VB |
1 |
nA |
||
Capacitance |
CPD |
VR = 0.9 VB |
0.5 |
pF |
||
Responsivity1) |
R |
VR = 0.95 VB(1550nm) |
7 |
A/W |
||
Breakdown voltage |
VB |
ID = 10 uA, T=25℃ |
30 |
45 |
55 |
V |
Temperature coefficient |
γ |
ΔVB/ΔT |
80 |
mV/℃ |
||
Gain-bandwidth product |
GBP |
30 |
GHz |
|||
Operating range2) |
λ |
– |
1.0 |
– |
1.65 |
µm |
1) The responsivity when M=1 is calculated as 0.9A/W, but there is no way to measure the voltage of unity gain.
2) The APD chip can be operated at the wavelength range between 1.0 and 1.65 µm with different responsivity.
Dimension Parameter
Parameter |
Symbol |
Typ. |
Unit |
Light receiving area diameter |
D |
50 |
µm |
Chip size |
– |
300×300 |
µm2 |
Bonding pad diameter |
– |
70 |
µm |
Chip thickness |
t |
125 ± 15 |
µm |
1 Comments on “2.5G InGaAs APD Chip”
Comments are closed.