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Zn-diffusion completed epiwafer

2’’ Zn-diffusion completed epiwafer by MOVPE is available.  Only AR coating and metallization process are needed to finish P-side chip process.

Epitaxial Capability

 Parameters  Values
 Thickness control  Better than ±5%
 Thickness uniformity  Better than ±2% at the inner 40mm
 N –InP doping (cm-3)  Si-doped, 1E16 to 5E17
 N -InP doping (cm-3)  Si-doped, 5E15 to 1E16
 P –InP doping (cm-3)  Zn-doped, >2E18
 P+ -InGaAs doping (cm-3)  Zn-doped, >1E19
 i-InGaAsP background C.C (cm-3)  <2E15 (special requested absorption layer)
 i-InGaAs background C.C. (cm-3)  <1E15
 Defect density control (Diameter)  <50cm-3(D>10μm)
 Refraction index  SiO2: 1.45±0.05 /SiNx: 2.05±0.1

 

Device Performance

 Parameter  Symbol  Typical
 Dark Current @-5V

Id

 <500pA
 Capacitance @-5V

CP

 <6pF
 Responsivity

Res

 ~0.9 A/W (With AR coating)
 Break down Voltage @10μA

VR

 >-30V
 Serial resistance

Rs

 <40Ω
 Good device yield  >80%
 Zn diffused, planar type PIN

300 μm aperture

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