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1550nm MQW Epiwafer

1550nm MQW Epiwafer Specification

 Layer name

Composition

Doping concentration

Thickness

 n upper layer

n-InP

1 x 1018cm-3

10 nm

n-InP (Repeat 2)

1 x 1018cm-3

7.5 nm

 Super lattice

n-In0.85Ga0.15As0.327P0.673 (Repeat 2)

1 x 1018cm-3

7.5nm

 N cladding layer

n-InP

1 x 1018cm-3

110 nm

Al0.055Ga0.292In0.653As, 1.5 mm (Repeat 8 wells)

Undoped

7nm

 Quantum Wells

Al0.089Ga0.461In0.45As, 1.3 mm (Repeat 9 barriers)

Undoped

10 nm

 SCH

p-Al0.131Ga0.34In0.529As

1 x 1017cm-3

0.25 mm

 P cladding

p-InP

1 x 1018cm-3

1.5 mm

 P contact layer

p-In0.53Ga0.47As

1 x 1019cm-3 (Zn-doped)

0.1 mm

 p buffer layer

p-InP

1 x 1018cm-3

0.3 um

 P substrate

p-InP

1 x 1018cm-3

300 mm

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