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1310/1550nm 2.5Gbps APD-TIA TO Package

Feature:

2.5G APD TIA TO
2.5G APD TIA TO
  • InGaAs APD Chip for 2.5Gbps
  • 50um large APD detecting area
  • TO-46 with shart Cap Lens
  • 2.5mm focal distance
  • Cost-effective GPON ONu

Application:

The InGaAs APD with TIA is designed for high speed, high performance data communication and telecommunication applications.  Excellent power coupling to single mode fiber enhance better sensitivity.

Parameter Symbol Conditions Min. Max. Unit
Operating Temperature Top -40 85 °C
Storage Temperature Tstorage -40 +85 °C
Solder Reflow Temperature STEM 10sec Max 260 °C
Optical Input Power Pin -7.0 dBm
Power Supply Voltage Vcc 3.6 V

 

Electrical and optical characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit
Supply Voltage Vcc 3.0 3.3 3.6 V
Supply Current Icc Vcc=3.3V, no loads 15 20 24 mA
Breakdown Voltage VBR Id=10uA 35 45 55 V
Operating Voltage Vop Vcc=3.3V VBR-3 V
Sensitivity S λ=1490nm@2488.32Mbps, PRBS=233-1, ER=10dB, DER=10-10 -31 dBm
Wavelength λ 1260 1310 1620 nm
Rise/Fall Time (20%~80%) tr/tf Pin=-30dBm, M=9 150/150 ps
VBR Temperature Coefficient ∆VBR/T Id=10ɥA, TC=25~70°C

Id=10ɥA, TC=-40~70°C

 

0.1

0.12

0.15

%/°C

%/°C

Saturation Power Psat λ=1490nm@2488.32Mbps

, PRBS=233-1, ER=10dB, DER=10-10

-7.0 dBm

 

 

 

 

 

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