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650nm Resonant cavity light emitting diode (RCLED)

650nm Resonant cavity light emitting diode (RCLED)

Two or three inches epiwafers grown by MOVPE are available for 650nm Resonant cavity light emitting diode (RCLED) fabrication.  The active region comprises multiple quantum wells of InGaP/InAlGaP sandwiched by InAlGaP layers to form a resonant cavity between P- and N-DBR mirrors.  Since N-DBR has higher refection, the light is emitted from the P-DBR mirror.  650nm RCLED can be used as light source in plastic optical fiber (POF) communication application.

 

Epitaxial Capability

 Parameters  Values
 PL wavelength  ±5nm of specified value
 Etlon dip  ±10nm of specified value
 SB center  ±10nm of specified value
 Thickness uniformity  Better than ±2.5%
 Doping control  ~±30%
 P-AlGaAs doping (cm-3)  C doped; 5E17 to 1E201
 N-AlGaAs doping (cm-3)  Si doped; 1E17 to 5E18
 P+ GaAs doping (cm-3)  C doped; >1E19
 Defect density control (Diameter)  <100 cm-3 (D>10μm)

Device Performance

 Parameter  Symbol  Typical
 Forward Voltage@20mA  Vf  ~2.0V
 Output Power @20mA  PO  ~0.5mW
 Beam Divergence@20mA  2θ  ~100 degree
 Rise /Fall Time @20mA  Tr/Tf  5ns/5ns
 Aperture diameter  ɸ  80μm
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