Sense 。 Lite

650nm LD epiwafer

650nm LD epiwafer

The 650nm LD epiwafer is comprised with InGaP/InAlGaP material multiple quantum-well as the active layer.  Both pointer and DVD laser epiwafers are available.

Device Performance:

 Characteristics  Symbol  Conditions  Typical Value
 Threshold Current  Ith  ~20 mA
 Operating Current  IOP  @5mW  ~32 mA
 Wavelength  λ  650~655nm
 Slope efficiency  η  @5mW  ~0.4 W/A
DiggShare

Leave a Reply